Highlights: 100 V GaN built on a 200 mm GaN-on-Si process via a Power Chip partnership; GaNSafe features 350 ns short-circuit protection and 2 kV ESD; GeneSiC covers 650 V–6,500 V and has been used in DoE-backed megawatt projects. Samples, datasheets, and eval boards are available for qualified customers.
Highlights: GaN a 100 V realizzato su un processo GaN-on-Si da 200 mm tramite una partnership Power Chip; le caratteristiche GaNSafe includono protezione da corto circuito 350 ns e ESD da 2 kV; GeneSiC copre 650 V–6.500 V ed è stato impiegato in progetti megawatt supportati dal DoE. Campioni, datasheet e schede di valutazione sono disponibili per i clienti qualificati.
Navitas Semiconductor (NASDAQ: NVTS) anunció nuevos dispositivos de potencia GaN y SiC de media y alta tensión diseñados para apoyar la arquitectura de fábrica AI de 800 VDC de NVIDIA el 13 de octubre de 2025. Las introducciones clave incluyen GaN FETs de 100 V para etapas DC-DC de tarjetas GPU, una cartera GaN de 650 V con ICs de potencia GaNSafe y una línea de MOSFET SiC de alta tensión GeneSiC.
Destacados: GaN de 100 V construido en un proceso GaN-on-Si de 200 mm a través de una asociación Power Chip; las características GaNSafe ofrecen protección de cortocircuito de 350 ns y ESD de 2 kV; GeneSiC cubre 650 V–6,500 V y se ha utilizado en proyectos megavatio respaldados por el DoE. Muestras, hojas de datos y placas de evaluación están disponibles para clientes calificados.
Navitas Semiconductor (NASDAQ: NVTS) 는 800 VDC AI 공장 아키텍처를 지원하도록 설계된 중고전압 및 고전압 GaN 및 SiC 파워 소자를 2025년 10월 13일 발표했습니다. 주요 도입으로는 GPU 보드 DC-DC 스테이지용 100 V GaN FET, GaNSafe 파워 IC가 포함된 650 V GaN 포트폴리오, 그리고 고전압 GeneSiC SiC MOSFET 라인업이 있습니다.
하이라이트: Power Chip 파트너십을 통한 200 mm GaN-on-Si 공정의 100 V GaN; GaNSafe 기능은 350 ns의 단락 보호 및 2 kV ESD를 제공합니다; GeneSiC는 650 V–6,500 V 범위를 커버하며 DoE가 지원하는 메가와트 프로젝트에 사용되었습니다. samples, datasheets 및 평가 보드는 자격 있는 고객에게 제공됩니다.
Navitas Semiconductor (NASDAQ: NVTS) a annoncé de nouveaux dispositifs de puissance GaN et SiC de moyenne et haute tension conçus pour soutenir l’architecture d’usine IA 800 VDC de NVIDIA le 13 octobre 2025. Principales nouveautés: FETs GaN de 100 V pour les étages DC-DC des cartes GPU, une gamme GaN de 650 V avec des circuits d’alimentation GaNSafe et une ligne de MOSFET SiC haute tension GeneSiC.
Points forts: GaN 100 V fabriqué sur un procédé GaN-on-Si de 200 mm via un partenariat Power Chip; les caractéristiques GaNSafe incluent une protection contre les courts-circuits de 350 ns et une ESD de 2 kV; GeneSiC couvre 650 V–6 500 V et a été utilisé dans des projets mégawatt soutenus par le DoE. Des échantillons, des fiches techniques et des cartes d’évaluation sont disponibles pour les clients qualifiés.
Navitas Semiconductor (NASDAQ: NVTS) kündigte neue mittel- und hochspannungs GaN- und SiC-Leistungskomponenten an, die darauf ausgelegt sind, die NVIDIAs 800 VDC AI-Fabrikarchitektur zu unterstützen, am 13. Oktober 2025. Wichtige Neuheiten umfassen 100-V-GaN-FETs für GPU-Board-DC-DC-Stufen, ein 650-V-GaN-Portfolio mit GaNSafe-Leistungschips und eine Hochspannungs-GeneSiC-SiC-MOSFET-Linie.
Highlights: 100-V-GaN, hergestellt auf einem 200-mm-GaN-on-Si-Verfahren durch eine Power-Chip-Partnerschaft; GaNSafe-Funktionen mit 350 ns Kurzschlussschutz und 2 kV ESD; GeneSiC deckt 650 V–6.500 V ab und wurde in DoE-unterstützten Megawatt-Projekten eingesetzt. Muster, Datenblätter und Evaluationsboards sind für qualifizierte Kunden erhältlich.
Navitas Semiconductor (NASDAQ: NVTS) أعلنت عن أجهزة طاقة GaN وSiC ذات جهد متوسط وعالٍ مصممة لدعم بنية مصنع NVIDIA AI بجهد 800 فولت DC في 13 أكتوبر 2025. تتضمن العروض الرئيسية FET GaN 100 فولت لمرحلة DC-DC للوحات GPU، ومجموعة GaN بجهد 650 فولت مع دوائر GaNSafe للطاقة، وخط MOSFET SiC عالي الجهد GeneSiC.
أبرز النقاط: GaN بجهد 100 فولت مبني على عملية GaN-on-Si مقاس 200 مم من خلال شراكة Power Chip؛ ميزات GaNSafe تتضمن حماية من القصر الزمني 350 نانوثانية وESD قدره 2 كV؛ GeneSiC يغطي من 650 فولت إلى 6,500 فولت وقد استُخدم في مشاريع ميغاوات مدعومة من DoE. العينات والورقات الفنية ولوحات التقييم متاحة للعملاء المؤهلين.
Navitas Semiconductor (NASDAQ: NVTS) 宣布了新的中高压 GaN 和 SiC 功率器件，旨在支持 NVIDIA 的 800 VDC AI 工厂架构，时间为 2025 年 10 月 13 日。关键新品包括用于 GPU 板 DC-DC 阶段的 100 V GaN FET、带 GaNSafe 功率 IC 的 650 V GaN 系列，以及高压 GeneSiC SiC MOSFET 系列。
亮点：通过 Power Chip 合作伙伴关系，在 200 mm GaN-on-Si 工艺上生产的 100 V GaN；GaNSafe 功能包括 350 ns 短路保护和 2 kV ESD；GeneSiC 覆盖 650 V–6,500 V，并已用于 DoE 支持的兆瓦级项目。样品、数据表和评估板对合格客户开放。
Positive
- Product support for NVIDIA’s 800 VDC AI factory architecture
- 100 V GaN FETs optimized for GPU DC-DC stages
- 200 mm GaN-on-Si manufacturing via Power Chip partnership
- GaNSafe 350 ns maximum short-circuit protection
- GeneSiC voltage range 650 V–6,500 V with DoE project use
Insights
Navitas details device roadmaps and manufacturing ties to support NVIDIA’s new 800 VDC AI factory architecture.
Navitas announced on
These products map directly to stated system stages: lower‑voltage DC‑DC GPU board stages (100 V devices) and higher‑voltage front‑end conversion (650 V and SiC). Key technical details in the disclosure include GaNSafe™ features (short‑circuit response up to 350 ns and 2 kV ESD on pins) and GeneSiC’s stated voltage range up to 6,500 V, which the company positions as applicable across grid and megawatt infrastructure.
Dependencies and risks are explicit in the text: product adoption requires customer qualification and integration into NVIDIA’s 800 VDC architecture, and production scale depends on the new 200 mm GaN manufacturing path. Watch for customer qualification milestones, volume sample uptake, and any production ramp announcements; the press release itself lists samples and datasheets as immediately available on
Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI factory architecture, delivering breakthrough efficiency, power density, and performance.
TORRANCE, Calif., Oct. 13, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announced progress in its development of advanced medium and high 800 VDC voltage GaN and SiC power devices to enable the 800 VDC power architecture announced by NVIDIA for next-generation AI factory computing platforms.
With the emergence of the ‘AI factory’, a new class of data center purpose-built for large-scale, synchronous AI and high-performance computing (HPC) workloads, has introduced a set of power challenges. Traditional enterprise and cloud data centers, which rely on legacy 54 V in-rack power distribution, are unable to longer meet the multi-megawatt rack densities required by today’s accelerated computing platforms. These challenges call for a fundamental architectural shift.
800 VDC power distribution provides:
- Higher efficiency by reducing resistive losses and copper usage
- Scalable infrastructure to deliver MW-scale rack power with highly compact solutions
- Global alignment with the IEC’s low-voltage DC (LVDC) classification (≤1,500 VDC)
- Simplified power distribution with efficient thermal management
The 800 VDC architecture enables direct conversion from 13.8 kVAC utility power to 800 VDC within the data center power room or perimeter. By leveraging solid-state transformers (SSTs) and industrial-grade rectifiers, this approach eliminates multiple traditional AC/DC and DC/DC conversion stages, maximizing energy efficiency, reducing losses, and improving overall system reliability.
The 800 VDC distribution directly powers IT racks, eliminating the need for additional AC-DC conversion stages, and is stepped down through two high-efficiency DC-DC stages (800 VDC to 54 V/12 VDC, and then to point-of-load GPU voltages), to drive advanced infrastructure such as the NVIDIA Rubin Ultra platform.
These state-of-the-art AI factories demand unprecedented levels of power density, efficiency, and scalability, which can be enabled by Navitas’ high-performance GaNFast and GeneSiC technologies.
Fig. 1. From the grid to the GPU, Navitas’ advanced GaN and SiC technologies power every stage of the AI data center.
As a pure-play wide bandgap power semiconductor company, Navitas delivers breakthrough GaN and SiC technologies that enable high-efficiency and high-power density power conversion across every stage of the AI data center, from the utility grid to the GPU.
Navitas’ new 100 V GaN FET portfolio delivers superior efficiency, power density, and thermal performance in advanced dual-sided cooled packages. These FETs are specifically optimized for the lower-voltage DC-DC stages on GPU power boards, where ultra-high density and thermal management are critical to meet the demands of next-generation AI compute platforms. Samples, datasheets, and evaluation boards are available for qualified customers.
Additionally, these high efficiency 100V GaN FETs are fabricated on a 200 mm GaN-on-Si process through a new strategic partnership with Power Chip, enabling scalable, high-volume manufacturing.
Navitas’ 650 V GaN portfolio includes a new line of high-power GaN FETs, alongside advanced GaNSafe™ power ICs, which integrate control, drive, sensing, and built-in protection features. This ensures exceptional robustness and reliability, supporting the demanding performance and safety requirements of next-generation AI infrastructure.
GaNSafe™ is the world’s safest GaN platform, featuring ultra-fast short-circuit protection (maximum 350 ns response), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew-rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
Enabled by over 20 years of SiC innovation leadership, GeneSiC™ proprietary ‘trench-assisted planar’ provides exceptional performance over temperature, delivering high-speed, cool-running operation for high-power, high-reliability applications. GeneSiC technology offers the industry’s broadest voltage range, stretching from 650 V to 6,500 V and has been implemented in multiple megawatt-scale energy storage and grid-tied inverter projects, including collaborations with the U.S. Department of Energy (DoE).
“As NVIDIA drives transformation in AI infrastructure, we’re proud to support this shift with advanced GaN and SiC power solutions that enable the efficiency, scalability, and reliability required by next-generation data centers,” said Chris Allexandre, President and CEO of Navitas. “As the industry moves rapidly toward megawatt-scale AI computing platforms, the need for more efficient, scalable, and reliable power delivery becomes absolutely critical. The transition from legacy 54 V architectures to 800 VDC is not just evolutionary, it’s transformational.”
“Navitas is undergoing a fundamental transformation, driven by the convergence of GaN and SiC technologies to power the world’s most advanced systems. From grid to GPU, our focus now extends far beyond mobile, as we address the megawatt-scale demands of AI factories, smart energy infrastructure, and industrial platforms with differentiated, high-performance power solutions.”
For more information, samples, datasheets, and evaluation boards on Navitas’ latest 100 V and 650 V GaN FETs, as well as our high voltage SiC MOSFET portfolio, please contact info@navitassemi.com.
Read more on Navitas’ Whitepaper on “Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure”.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI and data centers, energy and grid infrastructure, power-performance computing, and industrial applications. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Lori Barker, Investor Relations
ir@navitassemi.com
Cautionary Statement Regarding Forward-Looking Statements
This press release and the materials referenced herein include “forward-looking statements” within the meaning of the Securities Exchange Act of 1934, as amended. Other forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions that predict or indicate future events or trends or that are not statements of historical matters. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations and understandings of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas, and forward-looking statements are subject to a number of risks and uncertainties. For example, although our statements in this press release about the development of markets and the potential performance and demand for GaN and SiC power semiconductor products in AI data centers are based on research and analyses which we believe are reasonable, these statements are subject to significant uncertainties, particularly as our products are designed to disrupt existing markets and create new markets. Unlike established markets, such as those for legacy silicon solutions, where historical trends offer some predictive value, new markets present unique challenges and uncertainties.
Photos accompanying this announcement are available at:
https://www.globenewswire.com/NewsRoom/AttachmentNg/e55848b0-7374-49cc-899c-e764de5c8586
https://www.globenewswire.com/NewsRoom/AttachmentNg/c9c34798-d01c-4656-85b1-c780bb28d57e
FAQ
What did Navitas announce on Oct 13, 2025 regarding NVTS and NVIDIA’s 800 VDC?
Navitas announced new 100 V and 650 V GaN devices and high-voltage SiC products to support NVIDIA’s 800 VDC AI factory architecture.
How do Navitas’ new 100 V GaN FETs affect GPU power boards for NVTS investors?
The 100 V GaN FETs are optimized for lower-voltage DC-DC stages on GPU boards, targeting higher efficiency, power density, and thermal performance.
Does Navitas have manufacturing scale for the new GaN devices (NVTS)?
Yes—100 V GaN FETs are fabricated on a 200 mm GaN-on-Si process through a strategic partnership with Power Chip to enable scalable volume production.
What safety and protection features do Navitas GaNSafe products include for NVTS?
GaNSafe integrates control and protection, including ultra-fast short-circuit protection (350 ns max), 2 kV ESD on pins, and programmable slew-rate control.
What voltage range does Navitas’ GeneSiC SiC portfolio cover and where has it been used?
GeneSiC covers 650 V to 6,500 V and has been implemented in multiple megawatt-scale energy storage and grid-tied inverter projects, including collaborations with the U.S. Department of Energy.
How can investors or customers obtain Navitas NVTS product info and samples?
Navitas says samples, datasheets, and evaluation boards are available for qualified customers; contact info@navitassemi.com for details.
